Validation of predicted precipitate compositions in Al-Si-Ge
نویسندگان
چکیده
منابع مشابه
PRE-PRECIPITATE CLUSTERS AND PRECIPITATION PROCESSES IN Al-Mg-Si ALLOYS
––The solute clusters and the metastable precipitates in aged Al-Mg-Si alloys have been characterized by a three-dimensional atom probe (3DAP) and transmission electron microscopy (TEM). After long-term natural aging, Mg-Si co-clusters have been detected in addition to separate Si and Mg atom clusters. The particle density of β′′ after 10 h artificial aging at 175°C varies depending on pre-agin...
متن کاملComparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
Although epitaxial growth has been traditionally monitored by reciprocal space techniques, such as reflection highenergy electron diffraction (RHEED), the development of surface-sensitive imaging techniques, such as scanning tunneling microscopy (STM), allows for monitoring in the real-space. RHEED averages information over relatively large sample regions, and is thus more representative of the...
متن کاملSimulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires
The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on th...
متن کاملStructure, strain and stability of ultra-thin Ge layers in Si/Ge/Si axial heterojunction nanowires
The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt hetero...
متن کاملMn2CoZ „Z=Al,Ga,In,Si,Ge,Sn,Sb... compounds: Structural, electronic, and magnetic properties
G. D. Liu,1 X. F. Dai,2 H. Y. Liu,2 J. L. Chen,1 Y. X. Li,2 Gang Xiao,3 and G. H. Wu1 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China 2School of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130, People’s Republic of China 3Department of Physics, Brown Univers...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Metallurgical and Materials Transactions A
سال: 2004
ISSN: 1073-5623,1543-1940
DOI: 10.1007/s11661-006-0210-z